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第一章 单元测试
1、Which of the following is not a commonly used semiconductor material’? （ ）
A carbon
B lead
C silicon
D germanium
答案 lead
2、The characteristic of an ideal diode are those of a switch that can conduct current（ ） .
A in both directions
B in one direction only
C in both directions but in only one direction at a time
D depends on the circuit it is used in
答案 in one direction only
3、When a diode is doped with either a pentavalent or a trivalent impurity its resistance will （ ） .
A increase
B decrease
C make the resistance stable against variation due to temperature
答案 decrease
4、The piecewise linear model, equivalent circuit of the diode consists of （ ）.
A a junction capacitor, a battery, a small resistor, and the ideal diode
B a battery, a small resistor, and the ideal diode
C a battery and the ideal diode
D the ideal diode
答案 a battery, a small resistor, and the ideal diode
5、When a p-n junction is reverse-biased, its junction resistance is （ ）.
A high
B low
C determined by the components that are external to the device
D constantly changing
答案 high
第二章 单元测试
1、What is the value of the voltage dropped across forward-biased silicon diodes that are connected in parallel with each other? （ ）.
A 11.3 V
B 35 V
C 7 V
D 4 V
答案 7 V
2、The resistor voltage and resistor current in this circuit are （ ）. 
A 10 V, 5 mA
B 11 V, 2 mA
C 11 V, 11 mA
D 2 V, 11 mA
答案 11 V, 11 mA
3、Which of the following circuits is used to eliminate a portion of a signal? （ ）.
A Clipper
B Damper
C Voltage multiplier
D Voltage divider
答案 Clipper
4、The circuit shown here is a （ ）. 
A series clipper
B parallel clipper
C series clamper
D shunt clamper
答案 parallel clipper
5、The Zener diode must be operated such that （ ）.
A 
B 
is less than the specified 
C the applied voltage is greater than 
D All of these
答案 All of these
第三章 单元测试
1、In the active region, the base-emitter junction （ ）.
A and the base-collector junctions are both forward-biased
B and the base-collector junctions are both reverse-biased
C is forward-biased while the base-collector junction is reversed-biased
D is reverse-biased while the base-collector junction is forward-biased
答案 is forward-biased while the base-collector junction is reversed-biased
2、A BJT has measured dc current values of 
= 0.1 mA and 
= 8.0 mA. When IB is varied by 100 μA, IC changes by 10 mA. What is the value of the βac for this device?（ ）.
A 80
B 10
C 100
D 800
答案 100
3、When a BJT is operating in the active region, the voltage drop from the base to the emitter 
is approximately equal to the （ ）。
A base bias voltage
B base current times the base resistor
C diode drop (about 0.7 V)
D emitter voltage
答案 diode drop (about 0.7 V)
4、BJTs are commonly used as （ ）.
A the primary components in amplifiers
B series damper circuits
C the primary components in rectifiers
答案 the primary components in amplifiers
5、The condition where increase in bias current will not cause further increases in collector current is called （ ）.
A cutoff
B saturation
C active operation
答案 saturation
第四章 单元测试
1、When a BJT is biased in the cutoff region the collector-to-emitter voltage is typically equal to （ ）.
A the emitter voltage
B 03 V
C the collector current times the collector resistor
D the collector supply voltage
答案 the collector supply voltage
2、Calculate the collector-emitter voltage for this emitter-stabilized circuit.（ ） 
A 32 V
B 10.68 V
C 1335 V
D 14.24 V
答案 4.32 V
3、The difference between the resulting equations for a network in which an npn transistor has been replaced by a pnp transistor is （ ）.
A the values of the resistors
B the value of β
C the sign associates with the particular quantities
答案 the sign associates with the particular quantities
4、The term quiescent means （ ）.
A midpoint-biased
B at rest
C active
D inactive
答案 inactive
5、Voltage-divider bias stability is （ ）.
A dependent on alpha
B dependent of beta
C dependent on the collector resistor
D independent of beta
答案 independent of beta
第五章 单元测试
1、Given this configuration, determine the input impedance if VS = 40 mV, Rsense = 0.5 kΩ, and the input current is 20 μA.（ ）
A 5 MΩ
B 822 MΩ
C 1,500 Ω
D 582 kΩ
答案 1,500 Ω
2、The 
transistor model replaces the （ ） with the junction diode’s ac resistance.
A collector-base junction
B collector-emitter junction
C emitter—base junction
答案 emitter—base junction
3、Calculate the voltage gain for this circuit. （ ）
A -137.25
B -8.4
C -7.91
D -16.34
答案 -137.25
4、A transistor amplifier has an input signal applied to its emitter terminal and an output signal taken from its collector terminal. The amplifier is a(n) （ ）.
A common-emitter amplifier
B common-base amplifier
C common-collector amplifier
D emitter follower
答案 common-base amplifier
5、The voltage gain of a very well-designed common collector amplifier configuration, using a pnp transistor, is （ ）.
A about -0.9
B about 0.9
C in the range 0.95 to 0.99
D in the range -0.95 to -0.99
答案 in the range 0.95 to 0.99
第六章 单元测试
1、Shockley’s equation defines the （ ） of the FET and are unaffected by the network in which the device is employed.
A 
characteristics
B drain characteristics
C input/output characteristics
D transfer characteristics
答案 transfer characteristics
2、For an n-channel depletion MOSFET, 
= 8 mA and 
= -6 V. If 
= 0.8 V, what is the value of the drain current, 
? （ ）
A 8 mA
B 10.25 μA
C 10.28 mA
D 6 mA
答案 10.28 mA
3、The region of the JFET drain curve that lies between pinch-off and breakdown is called （ ）.
A the constant-voltage region
B the ohmic region
C the saturation region
答案 the saturation region
4、In the family of FETs, you can expect to find （ ）.
A an n-channel type
B a p-channel type
C unipolar structure
答案 an n-channel typea p-channel typeunipolar structure
5、FETs usually （ ）.
A are less sensitive to temperature change than BJTs
B have a higher input impudence than BJTs
C are smaller in construction than BJTs
答案 are less sensitive to temperature change than BJTshave a higher input impudence than BJTsare smaller in construction than BJTs
第七章 单元测试
1、This graphical solution represents （ ）.
A fixed bias for an n-channel JFET
B voltage-divider bias for an n-channel JFET
C self bias for an n-channel JFET
答案 self bias for an n-channel JFET
2、Generally, it is good design practice for linear amplifiers to have operating points that close to （ ）.
A are close to saturation level
B the cut-off region
C the midpoint of the load line
答案 the midpoint of the load line
3、Which of the following biasing circuits can be used with E-MOSFETs? （ ）
A self bias
B zero bias
C drain-feedback bias
D current-source bias
答案 drain-feedback bias
4、The primary difference between JFETs and depletion-type MOSFETs is （ ）.
A JFETs can have positive values of 
and levels of drain current that exceed 
B depletion-type MOSFETs can have positive values of 
and levels of 
that exceed 
C depletion-type MOSFETs can have only positive of
D JFETs can have only positive values of
答案 depletion-type MOSFETs can have positive values of and levels of that exceed
5、A JFET can be biased in several different ways. The common method(s) of biasing an n-channel JFET is(are) （ ）.
A self-bias configuration
B voltage-divider bias configuration
C fixed-bias configuration
答案 self-bias configurationvoltage-divider bias configurationfixed-bias configuration
第八章 单元测试
1、The FET version of the BJT’s common-emitter configuration is the （ ） circuit.
A common-source
B common-gate
C common-drain
D common-current
答案 common-source
2、Calculate the input impedance for this FET amplifier. （ ）
A 
B 
C 
D 
= would depend on the drain current 
答案
3、Design this circuit for a voltage gain of 10. You have to calculate the value of resistor 
and 
. It is desired that the transistor operate with a relatively high value of 
. For this device, a high value of 
is defined as 
. （ ）
A 
B 
C 
D 
答案
4、The （ ） amplifier has high input impedance, low output impedance, and low voltage gain.
A common-gate
B common-drain
C common-source
答案 common-drain
5、The （ ） FET amplifier has low input impedance, high output impedance, and high voltage gain.
A common-gate
B common-drain
C common-source
答案 common-gate
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